2SA950 transistor (pnp) feature power dissipation p cm : 0.6 w (tamb=25 ) collector current i cm : -0.8 a collector-base voltage v (br)cbo : -35 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v(br) cbo ic= -1ma , i e =0 -35 v collector-emitter breakdown voltage v(br) ceo i c = -10 ma , i b =0 -30 v emitter-base breakdown voltage v(br) ebo i e = -1ma, i c =0 -5 v collector cut-off current i cbo v cb = -35v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5v, i c =0 -0.1 a h fe(1) v ce =-1v, i c =-100ma 100 320 dc current gain h fe(2) v ce =-1v, i c = -700ma 35 collector-emitter saturation voltage v ce(sat) i c = -500ma, i b = -20ma -0.7 v collector output capacitance cob v cb =-10v, i e =0 f=1mh z 19 pf transition frequency f t v ce =-5v, i c =-10ma, 120 mhz classification of h fe(1) rank o y range 100-200 160-320 1 2 3 to-92 1. emitter 2. collector 3. base 2SA950 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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